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集成电路工艺制程虚拟仿真实验设计

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高校普遍存在难以建造完整的集成电路工艺线,导致工艺实验难以有效开展,在一些特殊情况(如突发疫情)下,原本建立的校企、校校合作方式开展的工艺实验难以实施等问题.针对存在的问题,以在功率集成电路中广泛应用的横向扩散金属氧化物半导体(LDMOS)器件为例,开展集成电路工艺制程虚拟仿真实验设计.基于半导体工艺计算机辅助设计(Sentaurus TCAD)虚拟仿真平台,完成LDMOS器件的结构设计、工艺设计、性能测试等实验环节,涵盖了集成电路从硅片选型到芯片成型的全流程工艺.
Experimental Design of Virtual Simulation for Integrated Circuit Process
It is difficult to build a complete IC process line in Colleges and universities,which makes it difficult to carry out process experiments effectively.Under some special circumstances(such as the outbreak of an epidemic),it is difficult to implement the process experiment carried out by the originally established school enterprise and school school cooperation.Aiming at the existing problems,taking the lateral diffusion metal oxide semiconductor(LDMOS)devices widely used in power integrated circuits as an example,the virtual simulation experiment design of integrated circuit process is carried out.Based on the virtual simulation platform of semiconductor process computer aided design(Sentaurus TCAD),the structure design,process design,performance test and other experimental links of LDMOS devices are completed,covering the whole process of integrated circuits from silicon wafer selection to chip forming.

integrated circuit processvirtual simulationLDMOS device

刘海涛、方衡、林智、陈彦孜、曾浩

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重庆大学微电子与通信工程学院,重庆 400044

重庆大学本科生院,重庆 400044

集成电路工艺制程 虚拟仿真 LDMOS器件

2024

自动化应用
重庆西南信息有限公司

自动化应用

影响因子:0.156
ISSN:1674-778X
年,卷(期):2024.65(10)