Research on measurement of channel temperature of AlGaN/GaN HEMT based on micro Raman method
In view of the fact that the existing temperature testing technology is difficult to meet the needs of GaN device lifetime,reliability and thermal management control accurate evaluation of the channel temperature,research on measurement of the channel temperature of AlGaN/GaN high electron mobility transistor(HEMT)based on micro Raman method was carried out.The channel temperature was determined by measuring the E2 phonon frequency characteristic peak of the GaN material using a Raman system.Improve the precision of Raman testing results by using the Lorentzian fitting method.The junction temperature of the device measured by the micro Raman method and infrared thermal imaging method was quantitatively studied.When the DC output power density of the device was 6,8,and 10 W/mm,the channel of the GaN device was measured based on the micro-Raman method,the temperature distributions were 140.7,176.7 and 213.6℃;respectively,the temperature distributions measured based on infrared thermal imaging were 132.0,160.2 and 189.8℃.Compared with the infrared method,the testing precision has been improved by 6.6%,10.3%and 12.5%.At the same time,the temperature measurement in the depth direction of the channel has been explored,and the temperature measurement of 3 μm under the channel has been achieved.The results show that the micro Raman method has higher testing precision,it is of great significance to the measurement and evaluation of device junction temperature and the improvement of thermal management technology.
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