Epitaxial quantum dots and applications in photonic quantum information
Ⅲ-Ⅴ semiconductor quantum dots are highly promising candidates for deterministic quantum light sources.Fabricated via molecular beam epitaxy(MBE),these quantum dots combine exceptional characteristics that are unmatched by other emitters—fast emission rates,high brightness,excellent single-photon purity,and strong indistinguishability.Quantum dots,which are nanoscale structures embedded in semiconductors,benefit from advanced micro-nano fabrication techniques,enabling the creation of micro-nano photonic structures for diverse quantum photonic applications.Furthermore,quantum dots can trap single electrons or holes,forming solid-state qubits that can temporarily store quantum information carried by flying photon qubits,thus acting as nodes in a quantum network.As a result,quantum dots play a key role in quantum light sources and photonic quantum devices within quantum information applications.With the rapid progress in quantum dot technology,groundbreaking advances continue to emerge.This paper focuses on the latest developments in the field of quantum dots,starting with their growth and characterization techniques.It explores the fundamental methods for quantum light sources and spin qubits based on quantum dots,highlights recent breakthroughs,and provides an outlook on the future prospects and challenges of quantum dots in photonic quantum information applications,especially in the context of quantum computing and quantum networking.
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