首页|Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical Parameter
Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical Parameter
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维普
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Compared to Si devices,the junction temperature of SiC devices is more critical due to the reliability concern introduced by immature packaging technology applied to new material.This paper proposes a practical SiC MOSFET junction temperature monitoring method based on the on-state voltage Vds(on)measurement.In Section Ⅱ of the paper,the temperature sensitivity of the on-state voltage Vds(on)is characterized.The hardware of the measurement system is set up in Section Ⅲ,which consists of an On-state Voltage Measurement Circuit(OVMC),the sampling and isolation circuit.Next,a calibration method based on the self-heating of the SiC MOSFET chip is presented in Section IV.In the final Section,the junction tem-perature is monitored synchronously according to the calibration results.The proposed method is applied to a Buck converter and verified by both an Infrared Radiation(IR)camera and a Finite Element Analysis(FEA)tool.
维普
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