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A New Parameter Extraction Method for Schottky Barrier Diodes

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A new parameter extraction method for Schottky barrier diodes is provided in this paper. Since the current model of Schottky barrier diodes is a nonlinear self-consistent equation, the nonlinear inconsistent equations set is composed of nonlinear model equations under different biases. The problem of solving nonlinear inconsistent equations set is transformed into an optimization problem. The global optimal solution of the parameters is obtained by genetic algorithm. Comparing with experimental data, the results indicate that the error of the method proposed by this paper is lower than that of Cheung method.

Schottky barrier diodesParameter extractionGenetic algorithm

CHANG Yongming、MAO Wei、HAO Yue

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State Key Discipline Laboratory of Wide Band Gap Semiconductor Technologies, Department of Microelectronics, Xidian University, Xi'an 710071, China

national Natural Science Foundation of Chinanational Natural Science Foundation of China

6133400261574112

2019

10.1049/cje.2019.03.020

中国电子杂志(英文版)

中国电子杂志(英文版)

CSTPCDCSCDSCIEI
ISSN：1022-4653
年,卷(期)：2019.28(3)
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