首页|A Robust on-Wafer Large Signal Transistor Characterization Method at mm-Wave Frequency

A Robust on-Wafer Large Signal Transistor Characterization Method at mm-Wave Frequency

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Accurate on-wafer large signal charac-terization of RF transistor is crucial for the optimum design of wireless communication circuits. We report a novel and systematic measurement method for the accurate acquisition of input and output power of on-wafer transistors up to 40GHz. This method employs external couplers to extract the travelling waves, combined with a novel large signal calibration algorithm to calculate the power at on-wafer probe tip. The accuracy of this method was bench marked versus conventional approaches in a real measurement bench, and further been verified by characterizing the large signal response of a 0.25μm GaN HEMT device. It is concluded that the measurement uncertainty has been greatly decreased with this new method, especially at mm-wave frequencies.

CalibrationNonlinear measurementRF power amplifiermm-wave bandOn-wafer test

SU Jiangtao、CAI Jialin、ZHENG Xing、SUN Lingling

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Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou 310018, China

Key Laboratory of Large Scale Integrated Design, Hangzhou 310018, China

This work is supported by the National Natural Science Foundation of ChinaThis work is supported by the National Natural Science Foundation of ChinaZhejiang Province Natural Science FoundationZhejiang Province Natural Science FoundationZhejiang Province Natural Science FoundationOpen Foundation of Science and Technology on Electronic Test Measurement Laboratory

6182780661871161LY17F010016LY17F010017LZ17F010001614200101010517

2019

10.1049/cje.2019.05.013

中国电子杂志(英文版)

中国电子杂志(英文版)

CSTPCDCSCDSCIEI
ISSN：1022-4653
年,卷(期)：2019.28(4)
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