首页|Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
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Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch.The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.
insulated-gate bipolar transistor (IGBT)high power densitytrench gate8-inchrail transportation
Guoyou Liu、Rongjun Ding、Haihui Luo
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CRRC Zhuzhou Electric Locomotive Institute Co.,Ltd.,Zhuzhou,Hunan 412000,China
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