首页|Effects of Vapor Pressure and Super-Hydrophobic Nanocomposite Coating on Microelectronics Reliability

Effects of Vapor Pressure and Super-Hydrophobic Nanocomposite Coating on Microelectronics Reliability

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Modeling vapor pressure is crucial for studying the moisture reliability of microelectronics, as high vapor pressure can cause device failures in environments with high temperature and humidity.To minimize the impact of vapor pressure, a super-hydrophobic (SH) coating can be applied on the exterior surface of devices in order to prevent moisture penetration.The underlying mechanism of SH coating for enhancing device reliability, however, is still not fully understood.In this paper, we present several existing theories for predicting vapor pressure within microelectronic materials.In addition, we discuss the mechanism and effectiveness of SH coating in preventing water vapor from entering a device, based on experimental results.Two theoretical models, a micro-mechanics-based whole-field vapor pressure model and a convection-diffusion model, are described for predicting vapor pressure.Both methods have been successfully used to explain experimental results on uncoated samples.However, when a device was coated with an SH nanocomposite, weight gain was still observed, likely due to vapor penetration through the SH surface.This phenomenon may cast doubt on the effectiveness of SH coatings in microelectronic devices.Based on current theories and the available experimental results, we conclude that it is necessary to develop a new theory to understand how water vapor penetrates through SH coatings and impacts the materials underneath.Such a theory could greatly improve microelectronics reliability.

vapor pressuremoisturesemiconductor reliabilitymicroelectromechanical systems (MEMS)super-hydrophobicnanocomposite coating

Xuejun Fan、Liangbiao Chen、C.P.Wong、Hsing-Wei Chu、G.Q.Zhang

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Department of Mechanical Engineering,Lamar University,Beaumont,TX 77710,USA

State Key Laboratory of Solid State Lighting,Beijing 100083,China

School of Materials Science and Engineering,Georgia Tech,Atlanta,GA 30332-0245,USA

Delft University of Technology,Delft 2600 AA,the Netherlands

Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

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authors would like to acknowledge the support of the National High-Tech Research and Development Program of China (863 Progr

2015AA03A101

2015

10.15302/J-ENG-2015034

工程科学(英文版)
中国工程院出版委员会

工程科学(英文版)

影响因子：0.226
ISSN：1672-4178
年,卷(期)：2015.1(3)
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