首页|Recent advances in memristors based on two-dimensional ferroelectric materials

Recent advances in memristors based on two-dimensional ferroelectric materials

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In this big data era,the explosive growth of information puts ultra-high demands on the data storage/computing,such as high computing power,low energy consumption,and excellent stability.However,facing this challenge,the traditional von Neumann architecture-based computing system is out of its depth owing to the separated memory and data process-ing unit architecture.One of the most effective ways to solve this challenge is building brain inspired computing system with in-memory computing and parallel processing ability based on neuromorphic devices.Therefore,there is a research trend toward the memristors,that can be applied to build neuromorphic computing systems due to their large switching ratio,high storage density,low power consumption,and high stability.Two-dimensional(2D)ferroelectric materials,as novel types of functional mate-rials,show great potential in the preparations of memristors because of the atomic scale thickness,high carrier mobility,mechanical flexibility,and thermal stability.2D ferroelectric materials can realize resistive switching(RS)because of the presence of natural dipoles whose direction can be flipped with the change of the applied electric field thus producing different polarizations,therefore,making them powerful candidates for future data storage and computing.In this review article,we introduce the physical mechanisms,characterizations,and synthetic methods of 2D ferroelectric materials,and then summarize the applications of 2D ferroelectric materi-als in memristors for memory and synaptic devices.At last,we deliberate the advantages and future challenges of 2D ferroelectric materials in the application of memristors devices.

two-dimensional ferroelectric materialssynthesis strategiesmemristorsartificial synapses

Wenbiao Niu、Guanglong Ding、Ziqi Jia、Xin-Qi Ma、JiYu Zhao、Kui Zhou、Su-Ting Han、Chi-Ching Kuo、Ye Zhou

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Institute for Advanced Study,Shenzhen University,Shenzhen 518060,China

College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,China

Institute of Organic and Polymeric Materials,Research and Development Center of Smart Textile Technology,Taipei University of Technology,Taipei 10608,Taiwan,China

National Natural Science Foundation of ChinaGuangdong Basic and Applied Basic Research FoundationScience and Technology Innovation Commission of ShenzhenScience and Technology Innovation Commission of ShenzhenNTUT-SZU Joint Research Program

619740932023A1515012479RCYX20200714114524157JCYJ20220818100206013NTUT-SZU-112-02

2024

物理学前沿
高等教育出版社

物理学前沿

CSTPCD
影响因子：0.816
ISSN：2095-0462
年,卷(期)：2024.19(1)
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