首页|Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions

Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions

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Two-dimensional transition metal dichalcogenides(TMDs)exhibit promising application prospects in the domains of electronic devices,optoelectronic devices and spintronic devices due to their distinctive energy band structures and spin-orbit coupling properties.Cr-based chalcogenides with narrow or even zero bandgap,covering from semicon-ductors to metallic materials,have considerable potential for wide-band photodetection and two-dimensional magnetism.Currently,the prepara-tion of 2D CrXn(X=S,Se,Te)nanosheets primarily relies on chemical vapor deposition(CVD)and molecule beam epitaxy(MBE),which enable the production of high-quality large-area materials.This review article focuses on recent progress of 2D Cr-based chalcogenides,including unique crystal structure of the CrXn system,phase-controlled synthesis,and heterojunction construction.Furthermore,a detailed introduction of room-temperature ferromagnetism and electrical/optoelectronic properties of 2D CrXn is presented.Ultimately,this paper summarizes the challenges associated with utilizing 2D Cr-based chalcogenides in preparation strate-gies,optoelectronics devices,and spintronic devices while providing further insights.

physical propertiestwo-dimensional materialsCr-based chalcogenidecontrolled synthesisheterojunctioneletronic and optoelectronic devices

Xiulian Fan、Ruifeng Xin、Li Li、Bo Zhang、Cheng Li、Xilong Zhou、Huanzhi Chen、Hongyan Zhang、Fangping OuYang、Yu Zhou

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School of Physics and Electronics,Hunan Key Laboratory of Nanophotonics and Devices,Central South University,Changsha 410083,China

Jincheng Research Institute of Opto-mechatronics Industry,Jincheng 048000,China

Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems,Jincheng 048000,China

School of Physical Science and Technology,Xinjiang University,Urumqi 830046,China

State Key Laboratory of Powder Metallurgy,Central South University,Changsha 410083,China

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Science and Technology Innovation Program of Hunan ProvinceScience and Technology Innovation Program of Hunan Province湖南省自然科学基金国家自然科学基金Open Project Program of Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems

"HuXiang Young Talents"2021RC30212021JJ40780519023462023SZKF14

2024

10.1007/s11467-023-1342-y

物理学前沿
高等教育出版社

物理学前沿

CSTPCD
影响因子：0.816
ISSN：2095-0462
年,卷(期)：2024.19(2)
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