首页|Stable alkali halide vapor assisted chemical vapor deposition of 2D HfSe2 templates and controllable oxidation of its heterostructures

Stable alkali halide vapor assisted chemical vapor deposition of 2D HfSe2 templates and controllable oxidation of its heterostructures

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Two-dimensional hafnium-based semiconductors and their heterostruc-tures with native oxides have been shown unique physical properties and potential electronic and optoelectronic applications.However,the scalable synthesis methods for ultrathin layered hafnium-based semiconductor laterally epitaxy growth and its heterostructure are still restricted,also for the understanding of its formation mechanism.Herein,we report the stable sublimation of alkali halide vapor assisted synthesis strategy for high-quality 2D HfSe2 nanosheets via chemical vapor deposition.Single-crystalline ultrathin 2D HfSe2 nanosheets were systematically grown by tuning the growth parameters,reaching the lateral size of 6-40 μm and the thickness down to 4.5 nm.The scalable amorphous HfO2 and HfSe2 heterostructures were achieved by the controllable oxidation,which bene-fited from the approximate zero Gibbs free energy of unstable 2D HfSe2 templates.The crystal structure,elemental,and time dependent Raman characterization were carried out to understand surface precipitated Se atoms and the formation of amorphous Hf-O bonds,confirming the slow surface oxidation and lattice incorporation of oxygen atoms.The relatively smooth surface roughness and electrical potential change of HfO2-HfSe2 heterostructures indicate the excellent interface quality,which helps obtain the high performance memristor with high on/off ratio of 105 and long retention period over 9000 s.Our work introduces a new vapor cata-lysts strategy for the synthesis of lateral 2D HfSe2 nanosheets,also providing the scalable oxidation of the Hf-based heterostructures for 2D electronic devices.

chemical vapor depositionHfSe2-HfO2nanoelectronics

Wenlong Chu、Xilong Zhou、Ze Wang、Xiulian Fan、Xuehao Guo、Cheng Li、Jianling Yue、Fangping Ouyang、Jiong Zhao、Yu Zhou

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School of Physics,Hunan Key Laboratory of Nanophotonics and Devices,Central South University,Changsha 410083,China

State Key Laboratory of Powder Metallurgy,Central South University,Changsha 410083,China

CAS Key Laboratory of Theoretical Physics,Institute of Theoretical Physics,Chinese Academy of Sciences,Beijing 100190,China

Department of Applied Physics,The Hong Kong Polytechnic University,Kowloon,Hong Kong,China

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National Natural Science Foundation of China(NSFC)National Natural Science Foundation of China(NSFC)National Natural Science Foundation of China(NSFC)National Natural Science Foundation of China(NSFC)Science Fund for Distinguished Young Scholars of Hunan ProvinceFundamental Research Funds for the Central Universities

122750761190525812335002120475032024JJ2007531118010379

2024

物理学前沿
高等教育出版社

物理学前沿

CSTPCD
影响因子:0.816
ISSN:2095-0462
年,卷(期):2024.19(3)
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