首页|Magnetic and electrical transport study of the intrinsic magnetic topological insulator MnBi2Te4 with Ge doping
Magnetic and electrical transport study of the intrinsic magnetic topological insulator MnBi2Te4 with Ge doping
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As an intrinsic magnetic topological insulator with magnetic order and non-trivial topological structure,MnBi2Te4 is an ideal material for studying exotic topological states such as quantum anomalous Hall effect and topo-logical axion insulating states.Here,we carry out magnetic and electrical transport measurements on(Mn1-xGex)Bi2Te4(x=0,0.15,0.30,0.45,0.60,and 0.75)single crystals.It is found that with increasing x,the dilution of magnetic moments gradually weakens the antiferromagnetic exchange interaction.Moreover,Ge doping reduces the critical field of ferromagnetic ordering,which may provide a possible way to implement the quantum anomalous Hall effect at lower magnetic field.Electrical transport measurements suggest that electrons are the dominant charge carriers,and the carrier density increases with the Ge doping ratio.Additionally,the Kondo effect is observed in the samples with x=0.45,0.60,and 0.75.Our results suggest that doping germanium is a viable way to tune the magnetic and electrical transport properties of MnBi2Te4,opening up the possibility of future applications in magnetic topological insulators.
MnBi2Te4intrinsic magnetic topological insulatortransition pointsKondo effect
Qingwang Bai、Mingxiang Xu
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School of Physics,Southeast University,Nanjing 211189,China
National Key R&D Program of ChinaNatural Science Foundation of Jiangsu Province of China
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