首页|Engineering phonon thermal transport in few-layer PdSe2
Engineering phonon thermal transport in few-layer PdSe2
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Engineering phonon transport in low-dimensional materials has great significance not only for fundamental research,but also for thermal management applications of electric devices.However,due to the difficul-ties of micro and nano processing and characterization techniques,the work on tuning phonon transport at nanoscale are scarce.In this work,by introducing Ar+plasma,we probed the phonon transport in two-dimen-sional(2D)layered semiconductor PdSe2 under different defect concentra-tions.By using thermal bridge method,the thermal conductivity was measured to decrease by 50％after a certain Ar+irradiation,which implied a possible phase transition.Moreover,Raman characterizations were performed to show that the Raman sensitive peaks of PdSe2 was red-shifted and finally became disappeared with the increase of defect concen-tration."Defect engineering"proves be a practical strategy in tuning the phonon thermal transport in low-dimensional materials,thus providing guidance for potential application in designing thermoelectric devices with various emerging materials.
phonon transportPdSe2defectsthermal bridge method
Meilin Li、Huanhuan Sun、Jun Zhou、Yunshan Zhao
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Phonon Engineering Research Center of Jiangsu Province,Center for Quantum Transport and Thermal Energy Science,Institute of Physics Frontiers and Interdisciplinary Sciences,School of Physics and Technology,Nanjing Normal University,Nanjing 210023,China
National Natural Science Foundation of ChinaNatural Science Foundation of Jiangsu ProvinceDepartment of Science and Technology of Jiangsu Province
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