首页|Inheritance of the exciton geometric structure from Bloch electrons in two-dimensional layered semiconductors
Inheritance of the exciton geometric structure from Bloch electrons in two-dimensional layered semiconductors
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We theoretically studied the exciton geometric structure in layered semi-conducting transition metal dichalcogenides.Based on a three-orbital tight-binding model for Bloch electrons which incorporates their geometric structures,an effective exciton Hamiltonian is constructed and solved perturbatively to reveal the relation between the exciton and its electron/hole constituent.We show that the electron-hole Coulomb interaction gives rise to a non-trivial inheritance of the exciton geometric structure from Bloch electrons,which manifests as a valley-dependent center-of-mass anomalous Hall velocity of the exciton when two external fields are applied on the electron and hole constituents,respectively.The obtained center-of-mass anomalous velocity is found to exhibit a non-trivial depen-dence on the fields,as well as the wave function and valley index of the exciton.These findings can serve as a general guide for the field-control of the valley-dependent exciton transport,enabling the design of novel quan-tum optoelectronic and valleytronic devices.
transition metal dichalcogenidesexcitongeometric structureBerry curvaturevan der Waals stacking
Jianju Tang、Songlei Wang、Hongyi Yu
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Guangdong Provincial Key Laboratory of Quantum Metrology and Sensing & School of Physics and Astronomy,Sun Yat-sen University(Zhuhai Campus),Zhuhai 519082,China
State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University(Guangzhou Campus),Guangzhou 510275,China
National Natural Science Foundation of ChinaDepartment of Science and Technology of Guangdong Province
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