首页|Tunable near-infrared light emission from layered TiS3 nanoribbons

Tunable near-infrared light emission from layered TiS3 nanoribbons

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The low-dimensional light source shows promise in photonic integrated circuits.Stable layered van der Waals material that exhibits luminescence in the near-infrared optical communication waveband is an essential component in on-chip light sources.Herein,the tunable near-infrared photoluminescence(PL)of the air-stable layered titanium trisulfide(TiS3)is reported.Compared with iodine particles as a transport agent,TiS3 grown by chemical vapor transport using sulfur powder as a transport agent has fewer sulfur vacancies,which increases the luminescence inten-sity by an order of magnitude.The PL emission wavelength can be regulated in the near-infrared regime by thickness control.In addition,we observed an interesting anisotropic strain response of PL in layered TiS3 nanorib-bon:a blue shift of PL was achieved when the uniaxial tensile strain was applied along the b-axis,while a negligible shift was observed when the strain was applied along the a-axis.Our work reveals the tunable near-infrared luminescent properties of TiS3 nanoribbons,suggesting their potential applications as near-infrared light sources in photonic integrated circuits.

titanium trisulfidenear-infrared luminescenceS-vacancytunabilitystrain engineering

Junrong Zhang、Cheng Chen、Yanming Wang、Yang Lu、Honghong Li、Xingang Hou、Yaning Liang、Long Fang、Du Xiang、Kai Zhang、Junyong Wang

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School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China

CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications,i-Lab,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences,Suzhou 215123,China

Frontier Institute of Chip and System,Fudan University,Shanghai 200438,China

School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China

College of Energy & Power Engineering,Inner Mongolia University of Technology,Hohhot 010051,China

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National Key R&D Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaJiangsu Province Key R&D ProgramJiangsu Province Key R&D Programopen Foundation of Key Laboratory of Nanodevices of Jiangsu ProvinceCAS Young Talent programtechnical support for the Vacuum Interconnected Nanotech Workstation(Nano-X)from Suzhou Institute of Nano-Tech and Nano-BionChinese Academy of Sciences

2021YFA120080462274175T232502561927813BE2023009-5BE2021007-3ZS2301E3291305

2024

物理学前沿
高等教育出版社

物理学前沿

CSTPCD
影响因子:0.816
ISSN:2095-0462
年,卷(期):2024.19(4)