首页|All laser direct writing process for temperature sensor based on graphene and silver

All laser direct writing process for temperature sensor based on graphene and silver

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A highly sensitive temperature sensing array is prepared by all laser direct writing(LDW)method,using laser induced silver(LIS)as electrodes and laser induced graphene(LIG)as temperature sensing layer.A finite element analysis(FEA)photothermal model incorporating a phase transition mechanism is developed to investigate the relationship between laser parameters and LIG properties,providing guidance for laser processing parameters selection with laser power of 1-5 W and laser scanning speed(greater than 50 mm/s).The deviation of simulation and experimental data for widths and thickness of LIG are less than 5％and 9％,respectively.The electrical properties and temperature responsiveness of LIG are also stud-ied.By changing the laser process parameters,the thickness of the LIG ablation grooves can be in the range of 30-120 μm and the resistivity of LIG can be regulated within the range of 0.031-67.2 Ω·m.The percentage temperature coefficient of resistance(TCR)is calculated as-0.58％/℃.Furthermore,the FEA photothermal model is studied through experiments and simulations data regarding LIS,and the average deviation between experiment and simulation is less than 5％.The LIS sensing samples have a thickness of about 14 μm,an electrical resistivity of 0.0001-100 Ω·m is insensitive to temperature and pressure stimuli.Moreover,for a LIS-LIG based temperature sensing array,a correction factor is introduced to compensate for the LIG temperature sensing being disturbed by pressure stimuli,the temperature measurement difference is decreased from 11.2 to 2.6 ℃,indicating good accuracy for temperature measurement.

Laser direct writingTemperature sensorFinite element analysisLaser induced grapheneLaser induced silver

Qi Li、Ruijie Bai、Lianbo Guo、Yang Gao

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Shanghai Key Laboratory of Intelligent Sensing and Detection Technology,School of Mechanical and Power Engineering,East China University of Science and Technology,Shanghai 200237,China

North Automatic Control Technology Institute,Taiyuan 030006,China

Wuhan National Laboratory for Optoelectronics,Huazhong University of Science & Technology,Wuhan 430074,China

国家自然科学基金国家自然科学基金Shanghai Super Postdoctoral Incentive Plan中国博士后科学基金Open Project Program of Wuhan National Laboratory for Optoelectronics

522051545227514620221602022M7211392020WNLOKF007

2024

10.1007/s12200-024-00108-4

光电子前沿(英文版)

光电子前沿(英文版)

CSTPCDEI
影响因子：0.049
ISSN：2095-2759
年,卷(期)：2024.17(1)
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