Design of an on-chip wavelength conversion device assisted by an erbium-ytterbium co-doped waveguide amplifier

扫码查看

原文链接

NETL
NSTL
万方数据

外文摘要：In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2 μm band,generally falling below-20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to-15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.

外文关键词：

Silicon-based optoelectronicsWavelength conversionWaveguide amplifier2 μm band

作者：

Chen Zhou、Xiwen He、Mingyue Xiao、Deyue Ma、Weibiao Chen、Zhiping Zhou

展开 >

作者单位：

School of Physical Sciences,University of Science and Technology of China,Hefei 230026,China

Aerospace Laser Technology and System Department,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China

Hangzhou Aijie Optoelectronic Technology Co.Ltd.,Hangzhou 311400,China

基金：

Key Program of the National Natural Science Foundation of ChinaInternational Partnership Program of Chinese Academy of SciencesShanghai Science and Technology Innovation Action Plan

项目编号：

6203500118123KYSB2021001322dz208700

出版年：

2024

DOI：

10.1007/s12200-024-00118-2

光电子前沿(英文版)

CSTPCDEI

影响因子：0.049

ISSN：2095-2759

年,卷(期)：2024.17(2)