首页|Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses

Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses

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An ultraviolet-infrared(UV-IR)dual-wavelength photodetector(PD)based on a monolayer(ML)graphene/GaN heterostruc-ture has been successfully fabricated in this work.The ML graphene was synthesized by chemical vapor deposition(CVD)and subsequently transferred onto GaN substrate using polymethylmethacrylate(PMMA).The morphological and optical properties of the as-prepared graphene and GaN were presented.The fabricated PD based on the graphene/GaN hetero-structure exhibited excellent rectify behavior by measuring the current-voltage(Ⅰ-Ⅴ)characteristics under dark conditions,and the spectral response demonstrated that the device revealed an UV-IR dual-wavelength photoresponse.In addition,the energy band structure and absorption properties of the ML graphene/GaN heterostructure were theoretically investigated based on density functional theory(DFT)to explore the underlying physical mechanism of the two-dimensional(2D)/three-dimensional(3D)hybrid heterostructure PD device.This work paves the way for the development of innovative GaN-based dual-wavelength optoelectronic devices,offering a potential strategy for future applications in the field of advanced photodetection technology.

Wide bandgap semiconductorsGrapheneDual-wavelengthPhotodetector

Junjun Xue、Jiaming Tong、Zhujun Gao、Zhouyu Chen、Haoyu Fang、Saisai Wang、Ting Zhi、Jin Wang

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College of Electronic and Optical Engineering & College of Flexible Electronics(Future Technology),Nanjing University of Posts and Telecommunications,Nanjing 210023,China

Portland Institute,Nanjing University of Posts and Telecommunications,Nanjing 210023,China

National Key R&D Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNatural Science Foundation of Jiangsu ProvinceNatural Science Foundation of Jiangsu ProvinceChina Postdoctoral Science Foundationopen research fund of the National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology

2022YFB360540362374094621041106197406262004104BK20200094BK202105772023T160332

2024

10.1007/s12200-024-00121-7

光电子前沿(英文版)

光电子前沿(英文版)

CSTPCDEI
影响因子：0.049
ISSN：2095-2759
年,卷(期)：2024.17(2)