首页|Impact of device resistances in the performance of graphene-based terahertz photodetectors

Impact of device resistances in the performance of graphene-based terahertz photodetectors

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In recent years,graphene field-effect-transistors(GFETs)have demonstrated an outstanding potential for terahertz(THz)photodetection due to their fast response and high-sensitivity.Such features are essential to enable emerging THz applications,including 6G wireless communications,quantum information,bioimaging and security.However,the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device,so-called access or parasitic resistances.In this work,we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors.Such dual-gate architectures allow us to fine tune(decrease)the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector,respectively.Our results can be well understood by a series resistance model,as shown by the excellent agreement found between the experimental data and theoretical calculations.These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.

GrapheneTHzPhotodetectorField-effect transistorPlasmonic

O.Castelló、Sofía M.López Baptista、K.Watanabe、T.Taniguchi、E.Diez、J.E.Velázquez-Pérez、Y.M.Meziani、J.M.Caridad、J.A.Delgado-Notario

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Department of Applied Physics,University of Salamanca,37008 Salamanca,Spain

Unidad de Excelencia en Luz y Materia Estructurada(LUMES),University of Salamanca,37008 Salamanca,Spain

Research Center for Electronic and Optical Materials,National Institute for Materials Science,1-1 Namiki,Tsukuba 305-0044,Japan

Research Center for Materials Nanoarchitectonics,National Institute for Materials Science,1-1 Namiki,Tsukuba 305-0044,Japan

Nanotechnology Group,USAL-Nanolab,University of Salamanca,37008 Salamanca,Spain

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Ministry of Science and Innovation(MCIN)Spanish State Research Agency(AEI)under grantsSpanish State Research Agency(AEI)under grantsSpanish State Research Agency(AEI)under grantsJunta de Castilla y León cofunded by FEDER under the ResearchJunta de Castilla y León cofunded by FEDER under the ResearchKW and TT acknowledge support from the JSPS KAKENHIKW and TT acknowledge support from the JSPS KAKENHIWorld Premier International Research Center Initiative(WPI)MEXT,JapanMCIN and AEI"Ramón y Cajal"program

PID2021-126483OB-I00PID2021-128154NA-I00PID2022-136285NB-C32SA103P23SA106P2321H0523323H02052RYC2019-028443-I

2024

10.1007/s12200-024-00122-6

光电子前沿(英文版)

光电子前沿(英文版)

CSTPCDEI
影响因子：0.049
ISSN：2095-2759
年,卷(期)：2024.17(2)