首页|Excitonic devices based on two-dimensional transition metal dichalcogenides van der Waals heterostructures

Excitonic devices based on two-dimensional transition metal dichalcogenides van der Waals heterostructures

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Excitonic devices are an emerging class of technology that utilizes excitons as carriers for encoding,transmitting,and storing information.Van der Waals heterostructures based on transition metal dichalcogenides often exhibit a type Ⅱ band alignment,which facilitates the generation of interlayer excitons.As a bonded pair of electrons and holes in the separation layer,interlayer excitons offer the chance to investigate exciton transport due to their intrinsic out-of-plane dipole moment and extended exciton lifetime.Furthermore,interlayer excitons can potentially analyze other encoding strategies for information processing beyond the conventional utilization of spin and charge.The review provided valuable insights and recommendations for researchers studying interlayer excitonic devices within van der Waals heterostructures based on transition metal dichalcogenides.Firstly,we provide an overview of the essential attributes of transition metal dichalcogenide materials,focusing on their fundamental properties,excitonic effects,and the distinctive features exhibited by interlayer excitons in van der Waals heterostructures.Subsequently,this discourse emphasizes the recent advancements in interlayer excitonic devices founded on van der Waals heterostructures,with specific attention is given to the utilization of valley electronics for information processing,employing the valley index.In conclusion,this paper examines the potential and current challenges associated with excitonic devices.

excitonic devicesvan der Waals heterostructurestransition metal dichalcogenidesinterlayer excitonsvalley-Hall effectoptoelectronics

Yulun Liu、Yaojie Zhu、Zuowei Yan、Ruixue Bai、Xilin Zhang、Yanbo Ren、Xiaoyu Cheng、Hui Ma、Chongyun Jiang

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College of Electronic Information and Optical Engineering,Nankai University,Tianjin 300350,China

School of Physical Science and Technology,Tiangong University,Tianjin 300387,China

National Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNatural Science Foundation of Tianjin CityNatural Science Foundation of Tianjin CityScientific Research Project of Tianjin Municipal Education CommissionFundamental Research Funds for the Central Universities of Nankai UniversityKey Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinEngineering Research Center of Thin Film Optoelectronics Technology,Ministry of Education of China

2022YFB2803900617041216197407519JCQNJC0070022JCZDJC004602019KJ02822JCZDJC00460

2024

10.1007/s11705-023-2382-0

化学科学与工程前沿
高等教育出版社

化学科学与工程前沿

CSTPCDEI
影响因子：0.172
ISSN：2095-0179
年,卷(期)：2024.18(2)
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