Tunable narrow-band perfect absorber based on metal-dielectric-metal
To achieve perfect narrowband absorber,we proposed a simple three-layer thin film(MDM)struc-ture and developed a theoretical model.A comprehensive investigation was conducted on this structure through a combination of simulations and theoretical calculations.First,we executed theoretical calculations on the structure using both finite-difference time-domain algorithm(FDTD)and transfer matrix algorithm.The effects of several structural parameters on the absorption spectrum were analyzed in this study.We ana-lyzed and discussed the physical mechanism of narrow band perfect absorber structure caused by the struc-ture.Finally,we successfully used magnetron sputtering as a fabrication method to produce three-layer samples.The experimental results were consistent with the theoretical simulation.Our proposed structure for a narrowband perfect absorber can achieve a maximum narrow bandwidth of approximately 21 nm and a maximum absorption of 99.51%.We establish a strong basis for related applications by achieving perfect narrowband absorption.
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