首页|Self-assembling Monolayer-Assisted Perovskite Growth Enables High-Performance Solar Cells
Self-assembling Monolayer-Assisted Perovskite Growth Enables High-Performance Solar Cells
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Inverted(p-i-n)perovskite solar cells(PSCs)are favored by researchers owing to their superior compatibility with flexible substrates and tandem device fabrication.Additionally,the hole transport layer(HTL)serves as a template for perovskite growth,which is critical for enhancing the device performance.However,the current research on how the HTL promotes perovskite crystallization is insuffi-cient.Here,4PADCB,a self-assembled monolayer(SAM)hole transport material,was optimized as a superior template for perovskite growth through comparative analysis;accordingly,compact perovskite film with vertical growth was prepared.The better matched energy level alignment between 4PADCB and perovskite suppressed nonradiative recombination at the interface and enabled rapid hole extraction.Moreover,high-quality perovskite film growth on 4PADCB exhibited lower Young's modulus and less residual stress.By integrating 4PADCB into p-i-n PSCs,the optimal device achieved a power conversion efficiency of 24.80％,with an open-circuit voltage of 1.156 V,thus achieving the best rank among devices without perovskite post-treatment,additives,dopants,or intermediate layers.Furthermore,the unencapsulated device demonstrated exceptional thermostability and photostability under maximum power point tracking.Thus,this work provides a new understanding for the development of novel SAMs and perovskite growth,and it is expected to further improve device performance.
Perovskite solar cellsSelf-assembling monolayerCrystal growthHole transport materialStabilityEnergy level alignmentPerovskite filmPhotovoltaic efficiency
Jun Li、Lisha Xie、Shuncheng Yang、Xinyu Tong、Zhenwei Pu、Mengjin Yang、Yujie Wu、Daobin Yang、Tao Wang、Ziyi Ge
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School of Materials Science and Engineering,Zhejiang Sci-Tech University,Hangzhou,Zhejiang 310018,China
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology & Engineering,Chinese Academy of Sciences,Ningbo,Zhejiang 315201,China
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