An optimized model of trapped-tunneling current for full-scale MOS transistors
Absrtact:For the current traditional trapped tunneling current model,there are only uniform parameters for model fitting for different device sizes,and there is a problem that the model cannot be accurately fitted for device size changes.In this paper,a method related to the full-size information of the device is proposed to be added to the parameters of the captured tunneling current model,including the width direction of the device,the length direction and the coefficient of small size to optimize the original leakage model,so that the optimized leakage model can better reflect the measured data of device characteristics,and better solve the problem of capturing tunneling current to characterize the characteristics of the device more accurately,which improves the simulation reference basis for circuit designers.
MOS transistorcaptured tunneling currentfull sizeSPICE model
NETL
NSTL
万方数据
维普
