Numerical simulation design and optimization of magnetic shielding for SOT-MRAM
Magnetic random access memory has attracted more and more attention for its excellent performance such as high read/write speed,near infinite read/write endurance and low power consumption.Magnetic random storage uses the magnetic field direction to operate the storage bit,and the external magnetic field is easy to interfere with the magnetic junction,resulting in read and write errors.Therefore,it is of great significance to utilize magnetic shield package to reduce the influence of external magnetic field on memory.In this paper,the magnetic shield optimization design of the fourth generation spin-orbit torque magnetic random access memory is studied.According to the in-plane magnetic field sensitivity characteristics of spin-orbit torque magnetic random access memory,the magnetic shield finite element model is established by using parallel magnetic shield package,and the influence of magnetic shield structural factors(spacing,area and thickness)and magnetic saturation phenomenon on the magnetic shield effect is analyzed.This work provides a new idea for magnetic shield design of magnetic memory.
spin-orbit torque magnetic random access memorymagnetic shieldingfinite element
NETL
NSTL
万方数据
维普
