面向SOT-MRAM的磁屏蔽仿真设计与优化
Numerical simulation design and optimization of magnetic shielding for SOT-MRAM
高宏 1叶海波 2王超 2孙杰杰2
作者信息
- 1. 中国电子科技集团公司第五十八研究所;华中科技大学
- 2. 中国电子科技集团公司第五十八研究所
- 折叠
摘要
磁随机存储器由于其高读写速度、接近无限次的读写次数和低功耗等优异特性受到越来越多的关注.磁随机存储器采用磁场方向来操作存储位,外部磁场很容易对磁结产生干扰导致读写错误的发生.因此采用磁屏蔽封装结构来减小外部磁场对存储器的影响具有重要意义.本文针对第四代自旋轨道矩磁随机存储器的磁屏蔽优化设计进行研究,根据自旋轨道矩磁随机存储器的面内磁场敏感特性,采用平行式磁屏蔽封装形式,建立了磁屏蔽有限元模型,分析了磁屏蔽结构因素(间距,面积和厚度)和磁饱和现象对磁屏蔽效果的影响,为磁存储器磁屏蔽设计提供了新思路.
Abstract
Magnetic random access memory has attracted more and more attention for its excellent performance such as high read/write speed,near infinite read/write endurance and low power consumption.Magnetic random storage uses the magnetic field direction to operate the storage bit,and the external magnetic field is easy to interfere with the magnetic junction,resulting in read and write errors.Therefore,it is of great significance to utilize magnetic shield package to reduce the influence of external magnetic field on memory.In this paper,the magnetic shield optimization design of the fourth generation spin-orbit torque magnetic random access memory is studied.According to the in-plane magnetic field sensitivity characteristics of spin-orbit torque magnetic random access memory,the magnetic shield finite element model is established by using parallel magnetic shield package,and the influence of magnetic shield structural factors(spacing,area and thickness)and magnetic saturation phenomenon on the magnetic shield effect is analyzed.This work provides a new idea for magnetic shield design of magnetic memory.
关键词
自旋轨道矩磁随机存储器/磁屏蔽/有限元Key words
spin-orbit torque magnetic random access memory/magnetic shielding/finite element引用本文复制引用
出版年
2024
NETL
NSTL
维普
万方数据