New-type Ultra-low Power Consumption and Temperature Drift Bandgap Reference Circuit
In this paper,a new-type design methods for reference voltage circuit is proposed,which generates an output reference voltage.It is also known as bandgap reference,and possesses the characteristics of ultra-low power consumption and ultra-low temperature drift coefficient.The circuit is simple and easy to implement,which is very suitable for chip design applications in the low-power field.Different from the traditional bandgap reference circuit,the circuit takes advantage of the base-emitter voltage of bipolar transistor with negative temperature coefficient and the gate-source voltage of MOSFET with positive temperature coefficient operating in the subthreshold region to weighted summation to form a bandgap reference voltage.The design adopts 1 10nm semiconductor technology,the power supply voltage is 1.8V,at typical process angle,the average power consumption current is 948nA in the temperature range of-40℃～105℃,temperature drift coefficient is 11.64ppm/℃.
low power consumptionlow temperature driftbandgap referencenegative temperature coefficientsubthresholdpositive temperature coefficient
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