A Novel Sense Amplifier to Mitigate the Impact of negative bias temperature instability effect for STT-MRAM
Spin-transfer torque random access memory(STT-MRAM)is promising candidate of non-volatile memory used in memory computing.However,with technology scaling down,STT-MRAM is affected by high sensitivity to process voltage and temperature(PVT)variations.Additionally,the negative bias temperature instability(NBTI)effect has become an important factor affecting the life of the PMOSFET used in the sense amplifier of STT-MRAM.In this paper,we propose a novel architecture of a sense amplifier,which includes switching transistors to minimize the NBTI effect on the PMOSFET device,and a balanced transistor to decrease the sensitivity of the sense amplifier to process variations.Finally,simulation results have been present to show the effectiveness and improve-ment of the proposed sense amplifier scheme.
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维普
