The study of high-quality Ⅲ nitride epitaxial on High-resistance silicon substrate
GaN devices have great application prospects in the field of high-frequency,high-voltage,high-power microelectronic devices due to the high electron density and high mobility of the special 2DEG(formation density up to 2 x 1013 cm-2).In this study,the AlGaN/GaN HEMT thin film material was successfully grown by epitaxial on an 8-inch High-resistance silicon substrate by MOCVD(Organometallic Chemical Vapor Deposition System),and the epitaxial wafer was s mooth and uniform without cracks,low warpage,good crystallization quality,good conductivity and strong anti-breakdo wn ability.
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