Review on the research progress of oxide reliability screening for planar-gate silicon carbide vertical power MOSFET devices
With the widespread application of silicon carbide(SiC)MOSFET power devices,there is an urgent need to solve the problem of gate reliability.This paper reviews the gate structure of planar-gate silicon carbide vertical MOSFET power devices and the commonly used gate oxide screening methods,introduces the physical model of early gate-oxide failure,and discusses the applicability between these physical models and screening methods.
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