中国集成电路2024,Vol.33Issue(11) :87-91.

碳化硅离子注入机控制系统优化设计

Optimization Design of Control System for SiC Ion Implanter

盛飞龙 伍三忠 梁启恒 仇礼钦 孔倩茵
中国集成电路2024,Vol.33Issue(11) :87-91.

碳化硅离子注入机控制系统优化设计

Optimization Design of Control System for SiC Ion Implanter

盛飞龙 1伍三忠 1梁启恒 1仇礼钦 1孔倩茵1
扫码查看

作者信息

  • 1. 季华实验室
  • 折叠

摘要

为对碳化硅离子注入机控制系统进行优化提升,从离子注入机的原理开始,描述了离子注入机的基本结构组成,并对控制系统的架构设计进行了一定的分析和阐述;接下来详细介绍了碳化硅离子注入机控制系统几个重要部件优化设计,包括加热优化设计、稳束优化设计、寻边优化设计,能有效提高加热效率和精度、束流稳定性、传片效率,使得碳化硅离子注入机整体性能达到了行业先进水平.

Abstract

In order to optimize and improve the control system of SiC ion implanter,starting from the principle of ion implantater,the basic structural composition of ion implantater is described,and the architecture design of the control system is analyzed and elaborated;Next,we will provide a detailed introduction to the optimization design of several important components in the control system of the SiC ion implantater,including heating optimization design,beam stabilization optimization design,and edge finding optimization design.These components can effectively improve heating efficiency and accuracy,beam stability,and transfer efficiency,making the overall performance of the SiC ion implantater reach an advanced level in the industry.

关键词

离子注入机/控制系统/碳化硅/部件/优化设计

Key words

ion implanter/Control System/SiC/model/optimization design

引用本文复制引用

出版年

2024
中国集成电路
中国半导体行业协会

中国集成电路

影响因子:0.144
ISSN:1681-5289
段落导航相关论文