HBM制造技术演进与今后的发展趋势
Progress in High Bandwidth Memory(HBM)Manufacturing Technologies and Future Developments
付永朝 1陈之文 1王静1
作者信息
摘要
随着智能数据应用的飞速发展,内存带宽限制导致的算力瓶颈日益明显.面对市场对高性能计算和数据处理能力不断攀升的需求,解决这一瓶颈问题正变得越来越具有挑战性.在这一背景下,高带宽内存(High Bandwidth Memory,HBM)被视为突破算力瓶颈的关键方案之一,并且已经成为当前先进封装技术领域的研发热点.本文将回顾HBM制造工艺的发展历程,分析其技术优势,并对其未来的发展方向进行展望.
Abstract
With the rapid advancement of intelligent data applications,the bottleneck in computational power caused by memory bandwidth limitations is becoming increasingly evident.This bottleneck is becoming progressively more challenging to address in the face of the escalating market demands for high-performance computing and data processing capabilities.Against this backdrop,High Bandwidth Memory(HBM)is seen as one of the key solutions to breaking through the computational power bottleneck and has become a hot topic in the field of advanced packaging technology research and development.This article will review the development history of HBM manufacturing processes,analyze its technical advantages,and provide an outlook on its future development direction.
关键词
高带宽内存/硅通孔/晶圆键合/Via-last/凸点/无凸点Key words
HBM/TSVs/Wafer Bonding/Via-last/Bump/Bumpless引用本文复制引用
出版年
2024
NETL
NSTL
万方数据