Design and Implementation of Control System for SiC High-Temperature Oxidation Furnace
The preparation of the gate oxide layer is a crucial step in the fabrication of SiC·MOSFET chips,and the current mainstream industry adopts a high-temperature thermal oxidation process.This paper designs and implements a complete set of control systems for these furnaces,completes the overall architecture design and software develop-ment of the control system,introduces the control methods for temperature,pressure,and conveyance of the equipment based on the characteristics of high-temperature oxidation furnaces.The control system features the separation of data and interaction,employs a modular design approach,and realizes fully automated process control through task man-agement.The software is user-friendly and straightforward to operate.Verified on the production line,the system op-erates stably and reliably,meeting the needs of production.
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