碳化硅高温氧化炉控制系统设计与实现
Design and Implementation of Control System for SiC High-Temperature Oxidation Furnace
何永平 1杨金 1陈庆广 1刘港 1曾桂辉 1邬啸宇1
作者信息
摘要
栅氧层制备是SiC MOSFET芯片制备的重要一环,当前产业上主流采用高温热氧化工艺.本文针对高温氧化炉设备特点,设计并实现了一套整机控制系统,完成了控制系统的总体架构设计和软件开发,介绍了设备的温度、压力以及传送的控制方法.控制系统具备数据与交互分离的特点,运用模块化设计思想,通过任务管理的方式实现系统的全自动流程控制.本系统具有软件交互友好、操作简单的特点,经产线验证,系统运行稳定可靠,能满足生产需要.
Abstract
The preparation of the gate oxide layer is a crucial step in the fabrication of SiC·MOSFET chips,and the current mainstream industry adopts a high-temperature thermal oxidation process.This paper designs and implements a complete set of control systems for these furnaces,completes the overall architecture design and software develop-ment of the control system,introduces the control methods for temperature,pressure,and conveyance of the equipment based on the characteristics of high-temperature oxidation furnaces.The control system features the separation of data and interaction,employs a modular design approach,and realizes fully automated process control through task man-agement.The software is user-friendly and straightforward to operate.Verified on the production line,the system op-erates stably and reliably,meeting the needs of production.
关键词
碳化硅/高温氧化/控制系统/模块化Key words
SiC/high-temperature oxidation/control system/modularization引用本文复制引用
出版年
2024
NETL
NSTL
万方数据