Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

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外文摘要：Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability.Over the past several years,benefitting from the sustainable innovations in laser technology and the significant progress in materials technology,megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices.Here,we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devi-ces in the linear modulation mode,including the mechanism,system architecture,critical technology,and experimental demonstration of the proposed high-power photonic microwave sources.The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.

外文关键词：

high-power photonic microwavewide bandgap photoconductive semiconductor deviceslinear modulationmulti-parameter adjustable microwave generationmulti-channel power synthesis

作者：

荀涛、牛昕玥、王朗宁、张斌、姚金妹、易木俣、杨汉武、侯静、刘金亮、张建德

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作者单位：

College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China

Nanhu Laser Laboratory,National University of Defense Technology,Changsha 410073,China

基金：

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNatural Science Foundation of Hunan Province

项目编号：

62071477621015772021JJ40660

出版年：

2024

DOI：

10.3788/COL202422.012501

中国光学快报(英文版)

中国光学学会中国科学院上海光学精密机械研究所

中国光学快报(英文版)

CSTPCD

影响因子：1.305

ISSN：1671-7694

年,卷(期)：2024.22(1)

参考文献量67