首页|Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

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In this paper,we demonstrate nBn InAs/InAsSb type Ⅱ superlattice[T2SL]photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared[MWIR]detection.To improve operating temperature and suppress dark current,a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a Si02 layer.These result in ultralow dark current density of 6.28 × 10-6A/cm2 and 0.31 A/cm2 under-600 mV at 97 K and 297 K,respectively,which is lower than most reported InAs/InAsSb-based MWIR photodetectors.Corresponding resistance area product values of 3.20 × 104 Ω·cm2 and 1.32 Ω·cm2 were obtained at 97 K and 297 K.A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5 μm and a peak detectivity of 2.1 × 109 cm·Hz1/2/W were obtained at a high operating temperature up to 237 K.

mid-wavelength infrared photodetectorInAs/InAsSb superlatticehigh operating temperaturedark current

曹澎、王天财、彭红玲、李占国、Qiandong Zhuang、郑婉华

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Laboratory of Solid-State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

College of Electronic and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

School of Physics,Changchun Normal University,Changchun 130022,China

Physics Department,Lancaster University,Lancaster LA1 4YB,UK

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National Science and Technology Major Project

2018YFE0200900

2024

10.3788/COL202422.012502

中国光学快报(英文版)
中国光学学会 中国科学院上海光学精密机械研究所

中国光学快报(英文版)

CSTPCD
影响因子：1.305
ISSN：1671-7694
年,卷(期)：2024.22(1)
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