首页|Efficient terahertz generation from van der Waalsα-In2Se3
Efficient terahertz generation from van der Waalsα-In2Se3
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Two-dimensional[2D]van der Waals materials have attracted tremendous attention due to their versatile physical proper-ties and flexible manipulation approaches.Among the various types of van der Waals materials,α-In2Se3 is remarkable for its intrinsic 2D ferroelectricity and high-performance opto-electronic properties.However,the study of the α-In2Se3 system in terahertz[THz]radiation is scarce,although it is promising for electrically controlled THz field manipulation.We inves-tigate the α-In2Se3 in different thicknesses and report that the THz generation efficiency induced by femtosecond laser pulses can be largely improved by reducing the thickness from the bulk.Furthermore,we reveal the surge current in thin film coupled with THz emission exhibits a different Auger recombination mode,which is helpful in understanding the mecha-nism and provides insights into the design of 2D highly efficient THz devices.
van der Waalsterahertzcarrier dynamics
段诗婕、杨鸣、周溯媛、张隆辉、韩锦森、孙旭、王广、刘昌勤、康冬冬、王小伟、陈家浩、戴佳钰
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Department of Physics,College of Science,National University of Defense Technology,Changsha 410073,China
Hunan Key Laboratory of Extreme Matter and Applications[XMAL],Changsha 410073,China
Hunan Key Laboratory for Micro-Nano Energy Materials and Devices,School of Physics and Optoelectronics,Xiangtan University,Xiangtan 411105,China
Guangxi Key Laboratory of Automatic Detecting Technology and Instrument,Guilin University of Electronic Technology,Guilin 541004,China
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National Key R&D Program of ChinaNSAFScience and Technology Innovation Program of Hunan ProvinceNational Natural Science Foundation of China(NSFC)
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