首页|Carrier transport barrier in AlGaN-based deep ultraviolet LEDs on offcut sapphire substrates
Carrier transport barrier in AlGaN-based deep ultraviolet LEDs on offcut sapphire substrates
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AlGaN-based light-emitting diodes[LEDs]on offcut substrates enhance radiative emission via forming carrier localization centers in multiple quantum wells[MQWs].This study introduces the carrier transport barrier concept,accessing its impact on the quantum efficiency of LEDs grown on different offcut sapphire substrates.A significantly enhanced internal quantum efficiency[1QE]of 83.1％is obtained from MQWs on the 1° offcut sapphire,almost twice that of the controlled 0.2° offcut sample.Yet,1° offcut LEDs have higher turn-on voltage and weaker electroluminescence than 0.2° ones.Theoretical calculations demonstrate the existence of a potential barrier on the current path around the step-induced Ga-rich stripes.Ga-rich stripes reduce the turn-on voltage but restrict sufficient driving current,impacting LED performance.
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