Gd3Al3Ga2O12∶Ce3+,Yb3+fluorescent ceramic with highly increased trap density for optical information storage

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外文摘要：Electron-trapping materials,due to their exceptional ability of energy storage and controllable photon release under exter-nal stimulation,have attracted considerable attention in the field of optical information storage[OIS].In this work,Gd3Al3Ga2O12∶Ce3+,Yb3+fluorescent ceramics,were developed using air and vacuum sintering technology.By co-doping Ce3+and Yb3+,the trap density was significantly increased by 7.5 times compared to samples containing only Ce3+.Vacuum annealing further enhanced trap density by 1.6 times compared to samples sintered solely in air,while generating deep traps[1.44 eV],making Gd3Al3Ga2O12∶Ce3+,Yb3+an excellent OIS medium.This work is expected to facilitate the develop-ment of OIS materials.

外文关键词：

electron-trapping materialsoptical information storageGd3Al3Ga2O12∶Ce3+,Yb3+two-step sintering method

作者：

尹教成、蒋仁杰、张君伟、胡巧、赵苗、王晓霞、潘安练、阮昊

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作者单位：

College of Materials Science and Engineering,Hunan University,Changsha 410082,China

Photonic Integrated Circuits Center,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China

College of Materials Science and Engineering,Hunan University,Changsha,410082,China

出版年：

2024

DOI：

10.3788/COL202422.071601

中国光学快报(英文版)

中国光学学会中国科学院上海光学精密机械研究所

中国光学快报(英文版)

CSTPCD

影响因子：1.305

ISSN：1671-7694

年,卷(期)：2024.22(7)