首页|Hettero-in tegrated high-peak-optical-power laser source(940nm)for time-of-flight sensors

Hettero-in tegrated high-peak-optical-power laser source(940nm)for time-of-flight sensors

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The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser with a dual-element composite 2 pm x 100 pm aperture and a compact heterothyristor switch is demonstrated.The achieved peak optical power was 33 W with a pulse duration of 3 ns at a thyristor operating voltage of 55 V.The leading edge of the laser pulse turn-on was 50 ps to a power level of 24.7 W,and the turn-on delay between the elements of the composite aperture was 160 ps.

hetero-integrated assemblysemiconductor lasersthyristor switchesLIDARgain-switching modelaser heterostructure

Sergey Olegovich Slipchenko、Aleksandr Aleksandrovich Podoskin、Ilia Vasil'evich Shushkanov、Marina Gennad'evna Rastegaeva、Artem Eduardovich Rizaev、Matvey Igorevich Kondratov、Artem Evgen'evich Grishin、Nikita Aleksandrovich Pikhtin、Timur Anatol'evich Bagaev、Maxim Anatol'evich Ladugin、Aleksandr Anatol'evich Marmalyuk、Vladimir Aleksandrovich Simakov

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Ioffe Institut,Russian Academy of Sciences,St.Petersburg 194021,Russia

RUDN University,Moscow 117198,Russia

Open Joint-Stock Company M.F.Stel'makh Polyus Research Institute,Moscow 117342,Russia

2024

中国光学快报(英文版)
中国光学学会 中国科学院上海光学精密机械研究所

中国光学快报(英文版)

CSTPCD
影响因子:1.305
ISSN:1671-7694
年,卷(期):2024.22(7)