Enhanced efficiency of high-speed Si and Si-based PbSe MSM photodiodes with integrated photon-trapping holes at 800-1550 nm wavelengths

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外文摘要：We theoretically and experimentally demonstrate a cylinder-shaped hole array with a small depth and an appropriate period integrated on a silicon-on-insulator substrate can enhance infrared absorption due to more bending of light and a higher back reflection.The Si metal-semiconductor-metal[MSM]photodiode with an hole array,whose depth is 250 nm,exhibits a 4-fold improved external quantum efficiency[EQE]of 81％,and an ultra-fast impulse response speed of 22 ps enabling a 3 dB bandwidth of up to 23.9 GHz.PbSe film with a thickness of 80 nm is integrated to broaden the response wavelength.A more than 500％EQE enhancement of the Si-based PbSe photodiode with 150-nm-deep photon-trapping holes is achieved at 1550 nm compared to the device without hole structures.

外文关键词：

Si photodiodephoton-trapping holesMSMSi-based PbSe photodiodeenhanced EQE

作者：

刘立新、苟君、李春雨、韩嘉悦、杨秀涛、陈进、张子健、谢哲远、于贺、吴志明、王军

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作者单位：

School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China

State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

Key Laboratory of Science and Technology on Infrared Detector,Luoyang 47109 9,China

出版年：

2024

DOI：

10.3788/COL202422.101301

中国光学快报(英文版)

中国光学学会中国科学院上海光学精密机械研究所

中国光学快报(英文版)

CSTPCD

影响因子：1.305

ISSN：1671-7694

年,卷(期)：2024.22(10)