首页|Terahertz chiral edge states enable inner-chip state transition and interchip communications over wireless terminals

Terahertz chiral edge states enable inner-chip state transition and interchip communications over wireless terminals

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Topological valley photonics has recently gained widespread interest owing to its robustness and backscattering immunity against disorders.Previous topological valley transport based on kink states required an interface between two topologi-cally distinct domains,while recent studies have reported that chiral edge states[CESs]can be realized at the external boundary of topological insulators by changing the on-site edge potentials.However,current research on CESs is predomi-nantly focused on the microwave frequency range,leaving challenges for emerging terahertz communications.Here,clad-ding-free CESs are demonstrated at the external boundary of terahertz all-silicon topological valley photonic crystals with gapless,single-mode,and linear dispersion.We show that CESs are immune to backscattering against sharp corners and support unidirectional propagation of chiral excitations.We also achieved smooth transition between kink states and CESs supported by an all-silicon platform,which could be used as the terahertz inner-chip connection.Finally,a terahertz wireless link between two disconnected CESs is verified for the near-field information interconnection between distinct mobile phones.Our work indicates CESs can improve the compactness of terahertz circuits and inspire advanced terahertz inter-chip communications.

terahertz chiral edge statescladdinginterchip communicationsmobile phones

陈红、任航、王文雅、许兆华、栗岩锋、许全、韩家广、徐速

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State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China

Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering,Key Laboratory of Optoelectronic Information Technology[Ministry of Education],Tianjin University,Tianjin 300072,China

2024

10.3788/COL202422.103701

中国光学快报(英文版)
中国光学学会 中国科学院上海光学精密机械研究所

中国光学快报(英文版)

CSTPCD
影响因子：1.305
ISSN：1671-7694
年,卷(期)：2024.22(10)