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薄膜铌酸锂低串扰交叉波导

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随着绝缘体上铌酸锂(LNOI)平台集成器件的增加,实现大规模集成变得尤为重要.低串扰和低损耗的多通道交叉波导可以大大减少波导连接的面积,从而提高集成密度和路由的灵活性.利用铌酸锂的各向异性,设计了基于自成像原理的不同尺寸的2×2交叉波导.该交叉波导基于X切LNOI,制造出的器件在C波段的串扰分别小于-33.31 dB(Y传方向)和-30.81 dB(Z传方向),插入损耗最小分别为0.094dB(V传方向)和0.356 dB(Z传方向).
Low-Crosstalk Crossing Waveguide with Thin-Film Lithium Niobate
Objective With breakthroughs in fabrication techniques,integrated optical components have been developed on a lithium niobate on insulator(LNOI)platform with unprecedented performance.However,with the requirement for large-scale integration of devices on the LNOI platform,multimode crossing waveguides,which have low crosstalk and loss,are essential to enhance integration density and routing flexibility.Because of the anisotropic characteristics of lithium niobate,the design of crossing waveguides must consider the different refractive indices in different propagation directions.In this work,we propose and demonstrate a 2×2 crossing waveguide based on self-imaging theory under different waveguide sizes in the X-cutting Y-propagating and X-cutting Z-propagating directions to satisfy practical requirements.Methods This study employs self-imaging theory to design the crossing waveguide.First,the relationship between the lithium-niobate waveguide width and effective refractive index is obtained by simulation,and the optimal beat length is calculated using the self-imaging principle.Subsequently,the calculated parameters are introduced into the software as initial values.In this process,the structural parameters of the multimode waveguide in both directions are set to be the same,and the optimal values are found by parameter scanning.The structural parameters in one direction are fixed as previously described,and those in the other directions are scanned to find the best structural parameters.Finally,a simulated crossing waveguide is fabricated and measured.The LNOI wafers are cut into 25 mm×21 mm pieces.All pieces are cleaned with a piranha solution.Hydrogen silsesquioxane(HSQ)resist is then spin-coated onto the samples.The HSQ resist is exposed by electron beam lithography and subsequently developed.The patterns are then transferred to the LNOI device layer via reactive-ion etching,where the etching depth of the LNOI layer is 300 nm.Finally,a 500-nm-thick SiO2 layer is formed on the lithium niobate waveguide through plasma-enhanced chemical vapor deposition(PECVD).The crossing waveguide is connected to the fiber using a grating coupler.The crosstalk and insertion losses are determined by subtracting the grating coupler spectrum from the measured spectrum.The insertion loss of the crossing waveguide is measured and averaged using cascade numbers.To understand the effects of process errors,the relationships among the device performance,waveguide width,and angle error are obtained by simulation.Results and Discussions The insertion loss and crosstalk of the device are measured in two directions(Fig.8).The minimum insertion losses of the crossing waveguides in the X-cutting Y-propagating and X-cutting Z-propagating directions are 0.094 dB and 0.356 dB,respectively.The corresponding crosstalk values are less than-33.31 dB and-30.81 dB in the C band,respectively.However,resonance dips appear in the transmission spectra in the X-cutting Y-propagating direction(Fig.8).This is because the cascaded crossing waveguides can be regarded as long-period waveguide gratings,which introduce resonance dips due to the coupling of the waveguide guiding mode to the radiative cladding modes.The insertion loss in the X-cutting Z-propagating direction is approximately 0.4 dB.The crosstalk values in both directions follow the same trend,which decrease in the C band.Differences in the experimental and simulation results can be seen,which mainly derive from fabrication imperfections,scattering losses,and waveguide absorption losses caused by the roughness of the sidewall edge of the lithium niobate waveguide.These process errors can be further optimized in subsequent processing to improve device performance.The relationships among the device performance,waveguide width,and angle error are obtained by simulation(Fig.9).Waveguide width errors have less effect on device performance than angle errors do,whereas the angle error has a greater effect in the X-cutting Z-propagating direction.Overall,the designed device has relatively high process tolerance.In addition,compared with the previously reported lithium niobate crossing waveguide,this work shows an improvement in the device size and crosstalk.Conclusions In this study,a 2×2 crossing waveguide with different structural parameters in the X-cutting Y-propagating and X-cutting Z-propagating directions is fabricated by single-step etching on X-cutting LNOI.The minimum insertion losses of the crossing waveguides in the X-cutting Y-propagating and X-cutting Z-propagating directions are 0.094 dB and 0.356 dB,respectively.The corresponding crosstalk values are less than-33.31 dB and-30.81 dB in the C band.The waveguide crossing has a footprint of 36.57 μm × 31.90 μm.The performance can be further enhanced by optimizing the fabrication process.

crossing waveguidelithium niobateintegrated photonicsself-imaging

胡毅标、何佳晶、王俊

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中国科学技术大学物理学院,安徽合肥 230026

中国科学院上海光学精密机械研究所空天激光技术与系统部启光创新中心,上海 201800

中国科学院大学材料科学与光电工程中心,北京 100049

交叉波导 铌酸锂 集成光子 自成像

2024

中国激光
中国光学学会 中科院上海光机所

中国激光

CSTPCD北大核心
影响因子:2.204
ISSN:0258-7025
年,卷(期):2024.51(14)