FOG Bonding电阻降低方案及机理探究
Research on the Scheme and Mechanism of FOG Bonding Resistance Reduction
韩鑫 1王晓杰 1唐乌力吉白尔 1谢建云 1薛海林 1闫亮1
作者信息
- 1. 鄂尔多斯市源盛光电有限责任公司,内蒙古鄂尔多斯 017000
- 折叠
摘要
近年来,中小尺寸产品客户端上线TP问题频发,其中有一类TP不良由FOG Bonding电阻异常偏大导致,但二次因未知.FOG堆叠结构为PNL+ACF(异方性导电胶)+FPC,但PNL、FPC为走线电阻,本身电阻较小(＜1Ω),故不考虑此影响.基于此,重点研究FOG Bonding接触电阻.首先建立机理模型并进行探究,然后通过调整FOG Bonding参数,使ACF导电粒子的爆破状态和胶体的固化状态达到最优,最终降低电阻.
Abstract
In recent years,the TP problem of small and medium-sized product clients has occurred frequently.One type of TP defect is caused by the abnormally large FOG Bonding resistance,but the secondary cause is unknown.As we all know,the FOG stack structure is PNL+ACF(anisotropic conductive adhesive)+FPC,but PNL and FPC are routing resistances,and their own resistances are small(＜1 Ω),so the influence here is not considered.This paper focuses on the FOG bonding contact resistance.We first establish a mechanism model to explore,and then adjust the FOG Bonding parameters to optimize the explosion state of ACF conductive particles and the curing state of the colloid,and finally reduce the resistance.
关键词
FOG/Bonding/接触电阻/ACF爆破/ACF固化Key words
FOG Bonding/contact resistance/ACF blasting/ACF curing引用本文复制引用
出版年
2024
NETL
NSTL
万方数据