首页|Highly efficient tunable photodetector with a bipolar response in van der Waals heterojunctions

Highly efficient tunable photodetector with a bipolar response in van der Waals heterojunctions

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The heterojunction integration of two-dimensional(2D)materials via van der Waals(vdW)forces,unencumbered by lattice and processing constraints,constitutes an efficacious approach to enhance the overall optoelectronic performance of photodetectors,due to an assortment of distinctive light-matter interactions.Nonetheless,vdW heterojunction photodetectors based on transition metal dichalcogenides(TMDs)face an inevitable trade-off between low dark currents and high responsivity,curtailing the application potential of myriad novel optoelectronic components in sensing,spectral,and communication systems.In this study,we present the successful actualization of a highly sensitive,self-powered,and gate-tunable bipolar response photodetector.The mechanisms underlying photocurrent generation were scrutinized via bias-,power-,and position-dependent mapping photo-response measurements,identifying the photovoltaic effect,which is attributable to the Schottky junction's built-in electric field,as the predominant mechanism.The prototype Au-WS2-graphene photodetector exhibits a remarkable light on/off ratio of 1.2 x 106,a specific detectivity of 6.12 × 1011 cmHz1/2W 1 with 20 μs response time at 638 nm.The wide gate-tunable responsivity provides an adjustability scope,ranging from 0.9 to 3.1 A W 1.Notably,the device demonstrates an exceptional linear photocurrent response,with a linear dynamic range(LDR)value approximating 130 dB,which significantly surpasses that of other photodetectors based on TMDs.

WS2/graphenevan der Waals heterojunctiongate-tunablebipolar response

SHI ChaoFan、ZHANG Shi、XIAO KeNing、ZHANG LiBo、HAN Li、ZHU YuLin、TANG WeiWei、LIU ChangLong、LI GuanHai、CHEN XiaoShuang

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College of Physics and Optoelectronic Engineering,Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China

State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaYouth Innovation Promotion Association of Chinese Academy of SciencesStrategic Priority Research Program of Chinese Academy of SciencesShanghai Rising-Star ProgramShanghai Science and Technology CommitteeShanghai Science and Technology CommitteeShanghai Science and Technology CommitteeNatural Science Foundation of Zhejiang ProvinceShanghai Municipal Science and Technology Major ProjectHangzhou West Science and Technology Innovation Corridor Youth ProjectExcellent Postdoctoral Research Projects of Zhejiang ProvinceOpen Fund of State Key Laboratory of Infrared PhysicsZhejiang Provincial Natural Science FoundationWestlake Center for Micro/Nano Fabrication

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2024

10.1007/s11431-023-2546-2

中国科学:技术科学(英文版)
中国科学院

中国科学:技术科学(英文版)

CSTPCDEI
影响因子：1.056
ISSN：1674-7321
年,卷(期)：2024.67(2)
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