首页|Surface plasmon decorated InGaO deep-UV photodetector array for image sensing and water quality monitoring via highly effective hot electron excitation and interfacial injection

Surface plasmon decorated InGaO deep-UV photodetector array for image sensing and water quality monitoring via highly effective hot electron excitation and interfacial injection

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In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga2O3(InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga2O3 through the plasmon-enhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173％,detectivity(D)of approximately 1013 Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below 17％for more than 80％of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.

InGaOPECVDsurface plasmonsolar-blind UV photodetector arrayoptoelectronic applications

SHU LinCong、SHA ShuLin、XI ZhaoYing、LI Lei、YAO SuHao、ZHANG JiaHan、JI XueQiang、ZHANG ShaoHui、BIAN Ang、JIANG MingMing、GUO YuFeng、TANG WeiHua、LIU Zeng

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Innovation Center of Gallium Oxide Semiconductor(IC-GAO),College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China

College of Science,MIIT Key Laboratory of Aerospace Information Materials and Physics,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China

School of Electronic Information Engineering,Inner Mongolia University,Hohhot 010021,China

Collaborative Innovation Center of Advanced Microstructures,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China

School of Integrated Circuits,Beijing University of Posts and Telecommunications,Beijing 100876,China

Institute of Biological and Medical Engineering,Guangdong Academy of Sciences,Guangzhou 510316,China

School of Science,Jiangsu University of Science and Technology,Zhenjiang 212100,China

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National Key Research and Development Program of ChinaYoung Scientists Fund of the National Natural Science Foundation of ChinaJoint Funds of the National Natural Science Foundation of ChinaNatural Science Research Startup Foundation of Recuring Talents of Nanjing University of Posts and TelecommunicationsNatural Science Research Startup Foundation of Recuring Talents of Nanjing University of Posts and TelecommunicationsPostgraduate Research & Practice Innovation Program of Jiangsu Province

2022YFB360540462204125U23A20349XK1060921115XK1060921002SJCX23_0300

2024

10.1007/s11431-024-2660-1

中国科学:技术科学(英文版)
中国科学院

中国科学:技术科学(英文版)

CSTPCDEI
影响因子：1.056
ISSN：1674-7321
年,卷(期)：2024.67(8)
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