Surface plasmon decorated InGaO deep-UV photodetector array for image sensing and water quality monitoring via highly effective hot electron excitation and interfacial injection

SHU LinCong ¹SHA ShuLin ²XI ZhaoYing ¹LI Lei ¹YAO SuHao ¹ZHANG JiaHan ³JI XueQiang ⁴ZHANG ShaoHui ⁵BIAN Ang ⁶JIANG MingMing ²GUO YuFeng ¹TANG WeiHua ¹LIU Zeng⁷

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作者信息

1. Innovation Center of Gallium Oxide Semiconductor(IC-GAO),College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
2. College of Science,MIIT Key Laboratory of Aerospace Information Materials and Physics,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China
3. School of Electronic Information Engineering,Inner Mongolia University,Hohhot 010021,China;Collaborative Innovation Center of Advanced Microstructures,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China
4. School of Integrated Circuits,Beijing University of Posts and Telecommunications,Beijing 100876,China
5. Institute of Biological and Medical Engineering,Guangdong Academy of Sciences,Guangzhou 510316,China
6. School of Science,Jiangsu University of Science and Technology,Zhenjiang 212100,China
7. School of Electronic Information Engineering,Inner Mongolia University,Hohhot 010021,China
折叠

Abstract

In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga2O3(InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga2O3 through the plasmon-enhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173％,detectivity(D)of approximately 1013 Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below 17％for more than 80％of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.

Key words

InGaO/PECVD/surface plasmon/solar-blind UV photodetector array/optoelectronic applications

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基金项目

National Key Research and Development Program of China(2022YFB3605404)

Young Scientists Fund of the National Natural Science Foundation of China(62204125)

Joint Funds of the National Natural Science Foundation of China(U23A20349)

Natural Science Research Startup Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(XK1060921115)

Natural Science Research Startup Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(XK1060921002)

Postgraduate Research & Practice Innovation Program of Jiangsu Province(SJCX23_0300)

出版年

2024

中国科学:技术科学(英文版)

中国科学院

中国科学:技术科学(英文版)

CSTPCDEI

影响因子：1.056

ISSN：1674-7321

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