首页|Enhanced back-illuminated Ga2O3-based solar-blind ultraviolet photodetectors

Enhanced back-illuminated Ga2O3-based solar-blind ultraviolet photodetectors

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Ga2O3 is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical stability.However,because of their relatively low responsivity,Ga2O3-based photodetectors still have difficulty meeting the requirements of practical applications.Here,we construct a high-performance Ga2O3 photodetector realized by back-illumination.Utilizing high-crystallinity epitaxially grown Ga2O3 as the DUV absorbing layer and the double-polished A12O3 substrate as the transparent window for injection of photons,the device operating in the back-illuminated mode exhibits a higher DUV photoresponse and faster response speed than in the front-illuminated mode.Therefore,our experimental results have led to the development of a novel strategy for designing and fabricating high-performance Ga2O3 photodetectors.

Ga2O3back-illuminatedsolar-blindphotodetector

YAN ZuYong、ZHI YuSong、JI XueQiang、YUE JianYing、WANG JinJin、LIU Zeng、LI Shan、LI PeiGang、HOU ShangLin、WU Gang、LEI JingLi、TANG WeiHua

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School of Science,State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals,Lanzhou University of Technology,Lanzhou 730050,China

China Academy of Launch Vehicle Technology,Beijing 100076,China

School of Integrated Circuits & State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China

School of Electronic Information Engineering,Inner Mongolia University,Hohhot 010021,China

College of Electronic and Optical Engineering & College of Microelectronics,National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies,Nanjing University of Posts and Telecommunications,Nanjing 210023,China

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2024

中国科学:技术科学(英文版)
中国科学院

中国科学:技术科学(英文版)

CSTPCDEI
影响因子:1.056
ISSN:1674-7321
年,卷(期):2024.67(11)