Abstract
Ga2O3 is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical stability.However,because of their relatively low responsivity,Ga2O3-based photodetectors still have difficulty meeting the requirements of practical applications.Here,we construct a high-performance Ga2O3 photodetector realized by back-illumination.Utilizing high-crystallinity epitaxially grown Ga2O3 as the DUV absorbing layer and the double-polished A12O3 substrate as the transparent window for injection of photons,the device operating in the back-illuminated mode exhibits a higher DUV photoresponse and faster response speed than in the front-illuminated mode.Therefore,our experimental results have led to the development of a novel strategy for designing and fabricating high-performance Ga2O3 photodetectors.
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