面向高性能计算的低温芯片技术:发展和挑战
Low-temperature CMOS technology for high-performance computing:development and challenges
程然 1李博 2王宗巍 3张结印 4单伟伟 5张建军 6蔡一茂 3韩根全2
作者信息
- 1. 浙江大学微纳电子学院,杭州 311200
- 2. 西安电子科技大学杭州研究院,杭州 311231
- 3. 北京大学集成电路学院,北京 100871
- 4. 松山湖材料实验室半导体异质材料与器件中心,东莞 523808
- 5. 东南大学集成电路学院,南京 211189
- 6. 松山湖材料实验室半导体异质材料与器件中心,东莞 523808;中国科学院物理研究所纳米物理与器件重点实验室,北京 100190
- 折叠
摘要
过去60多年,集成电路技术的进步推动了电子信息领域的快速发展.随着工艺制程进入纳米阶段,通过微缩化技术进一步提升器件和电路的性能需要克服技术和成本方面的多重挑战.探寻新的器件、设计和架构技术是高性能计算领域解决当下瓶颈的必然路径.低温芯片技术,利用晶体管低温下电学性能的提升,可以进一步提高逻辑芯片的算力并降低动态和静态功耗,由于和现有集成电路技术兼容性较高,是低成本实现更高性能计算的理想技术路线之一.此外,随着量子计算技术的发展,可扩展的大规模量子芯片需要和极低温互补金属氧化物半导体CMOS电路以及存储芯片实现片上集成,进而实现更高效的数据处理.本文面向高性能计算应用,从器件表征、模型、仿真和设计、应用等多个层面,分析并总结了低温芯片技术领域的发展历程、理论基础和技术挑战,并给出针对性的解决方案和建议,有助于推动我国在低温芯片技术领域的持续发展.
Abstract
Over the past 60 years,the progress of integrated circuit technology has promoted the prosperity of the information industry.As process technology pioneers sub-10 nm nodes,further performance improvement through device miniaturization encounters great challenges from both the cost and technology perspectives.It is a must to explore novel device structures,circuit design,or architecture to achieve higher computing performance.Low-temperature(LT,77 K)complementary metal oxide semiconductor(CMOS)technology,which benefits from higher device performance at lower temperatures,can be used to further increase computing speed and reduce dynamic and static power consumption.Due to the high level of compatibility with current CMOS technology,it is an ideal choice for future high-performance computing at an acceptable cost.Another scenario for the application of cryogenic or ultralow-temperature(＜10 K)CMOS circuits is integration with qubits to realize large-scale quantum chips.This paper reviews the history and state-of-the-art progress in low-temperature CMOS technology,including device characterization,modeling,process design kits,applications,etc.Theoretical and technical challenges in the field are forecast and discussed.Possible solutions are also provided to guide the continuous development of low-temperature CMOS technology in China.
关键词
低温芯片/低温电子学/低温PDK/高性能计算/量子计算Key words
low-temperature CMOS circuit/low-temperature electronics/low-temperature PDK/high-performance computing/quantum computing引用本文复制引用
基金项目
国家自然科学基金(62025402)
国家自然科学基金(62025401)
国家自然科学基金(62322401)
国家自然科学基金(12304100)
中央高校基本科研业务费专项资金资助项目()
出版年
2024
NETL
NSTL
万方数据