Analysis of RRAM device characteristic parameters based on statistical data
This article provides statistics on the process and electrical parameters for 58 RRAM devices with different structures and materials.The calculation model of the device characteristics was built by these parameters,while the differences in device data were calculated by using statistical percentile method,and as a result,quantitative indicators of RRAM device parameters were obtained.Based on the calculation results,we found that the write time,erase time,write energy,and data retention time of RRAM devices did not reach the expected indicators.ECM devices exhibit the quantum mechanical effects in the low resistance state,while there is no quantum mechanical effect for VCM devices in the low resistance.RRAM devices still need further development to replace Flash technology.In terms of the RRAM device's development trend,ECM and VCM devices have the smallest gap with NOR flash and are most likely to replace NOR flash.
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万方数据
