首页|基于室温铁磁性的(Fe,Al)共掺杂SiGe铁磁pn二极管的可调整流和磁阻特性

基于室温铁磁性的(Fe,Al)共掺杂SiGe铁磁pn二极管的可调整流和磁阻特性

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Ⅳ族稀磁半导体因其优异的磁电性能,以及在与当前主流半导体集成技术兼容的自旋电子器件中具有广阔的应用前景而受到越来越多的关注.事实上,具有室温铁磁性的Ⅳ族稀磁半导体及其衍生器件更有望在实际中得以应用.本工作设计并制备了基于p型(Fe,Al)共掺杂SiGe薄膜和n型Ge衬底的磁性pn二极管.磁性测量以及磁阻和反常霍尔效应测试揭示了p型(Fe,Al)共掺杂SiGe薄膜的室温铁磁性.有趣的是,磁性pn异质结表现出磁场可调的整流和磁阻行为.我们的研究结果为制备具有室温铁磁性的Ⅳ族稀磁半导体提供了一种可选策略,并为Ⅳ族稀磁半导体的实际自旋电子应用提供了范例.
Tunable rectification and magnetoresistance behaviors of ferromagnetic pn diode based on(Fe,Al)-doped SiGe with enhanced room-temperature magnetization
Group-Ⅳ diluted magnetic semiconductors(DMSs)have attracted rising attention owing to their excep-tional magnetic and electrical properties and promising po-tential for application in spintronic devices compatible with current mainstream semiconductor integration technology.Indeed,group-Ⅳ DMSs with room-temperature ferro-magnetism(RTFM)and devices derived from them are more expected for practical applications.In this work,p-type(Fe,Al)-doped SiGe thin films and pn diodes based on the p-type SiGe films and n-type Ge substrates are designed and fabri-cated.Magnetization characterizations,as well as magne-toresistance(MR)and anomalous Hall effect measurements,reveal RTFM in the p-type(Fe,Al)-doped SiGe thin films,in which the hole-mediated spontaneous magnetization pri-marily originating from Fe dopants is enhanced by holes provided by Al dopants.Interestingly,the ferromagnetic pn heterostructure exhibits magnetic field-tunable rectification and MR behaviors,especially at low temperatures,owing to the Zeeman splitting difference in the ferromagnetic p-SiGe and nonmagnetic n-Ge layers under applied magnetic fields.Our results provide an alternative strategy for fabricating group-Ⅳ DMSs with RTFM and a paradigm for practical spintronic application of group-Ⅳ DMSs.

diluted magnetic semiconductorSiGepn junctionrectificationmagnetoresistance

李加飞、张析、向钢

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College of Physics,Sichuan University,Chengdu 610064,China

diluted magnetic semiconductor SiGe pn junction rectification magnetoresistance

National Key Research and Development Program of ChinaNational Natural Science Foundation of China

2022YFA140510052172272

2024

10.1007/s40843-023-2697-x

中国科学:材料科学(英文)

中国科学:材料科学(英文)

CSTPCD
ISSN：
年,卷(期)：2024.67(2)
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