Boosting the mobility of organic semiconductors through strain engineering
Organic semiconductors(OSCs)are pivotal for advancing flexible electronics.However,their application has been severely hindered by their poor mobility.Although mo-lecular and device engineering can improve OSC mobility,progress has stagnated in recent years.In this study,we un-covered the layer-dependent charge transport properties of OSCs under strain and substantially enhanced their mobility by strain engineering.Applying strain reduced intermolecularπ-π spacing and electron-phonon scattering,thereby im-proving the charge transport efficiency.We observed a direct correlation between strain factor and material thickness,with thinner crystals demonstrating higher strain factors.Using molecularly thin two-dimensional molecular crystals,we achieved a substantial 58％increase in mobility.Our findings open new avenues to enhancing the mobility of OSCs.
Key Laboratory of Organic Integrated Circuit,Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences,Department of Chemistry,School of Science,Tianjin University,Tianjin 300072,China
Collaborative Innovation Center of Chemical Science and Engineering(Tianjin),Tianjin 300072,China
Engineering Research Center of Coal-Based Ecological Carbon Sequestration Technology of the Ministry of Education,Shanxi Datong University,Datong 037009,China
National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaFundamental Research Funds for the Central UniversitiesTianjin University 2021 Postgraduate Education Special Fund
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