首页|溶液法制备透明p型非晶磷掺杂SnO薄膜基超高速自供电光电探测器

溶液法制备透明p型非晶磷掺杂SnO薄膜基超高速自供电光电探测器

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p型氧化物半导体具有很强的空穴局域性,难以产生容易移动的空穴载流子,用简单方法制备高光电性能的p型氧化物半导体极具挑战性.本研究采用简单溶胶-凝胶法在手套箱中制备了非晶透明p型SnO薄膜.磷(P)掺杂改善了SnO薄膜及其相应自供电异质结光电探测器的光电性能.基于P掺杂SnO(P-SnO)的自供电异质结光电探测器的响应时间为40.29 μs/76.24 μs(0 V偏置),与其他p型氧化物基光电探测器相比响应时间最快.与典型的n型非晶氧化镓光电探测器相比,P-SnO光电探测器还具有最快的衰减时间.本文通过P掺杂引入杂质能级,导致光生电子-空穴对和光电流的增加以及器件性能的提高.这一工作不仅为制备高性能、低成本的p型P-SnO薄膜和光电探测器提供了一种简单的方法,而且为改进各种p型氧化物半导体和器件性能提供了一种新的途径.
Super high-speed self-powered photodetector based on solution-processed transparent p-type amorphous phosphorous-doped SnO film
It is challenging to simply prepare high-per-formance optoelectronic p-type oxide semiconductors because their strong hole localization makes it difficult to generate mobile hole carriers.In this study,amorphous transparent p-type SnO films were prepared in a glove box using a simple sol-gel method.Phosphorus(P)doping improves the optoelec-tronic properties of the SnO films and their corresponding self-powered heterojunction photodetectors.The response time of the self-powered heterojunction photodetectors based on P-doped SnO(P-SnO)is 40.29 μs/76.24 μs(0 V bias),which is the fastest among other p-type oxide-based photodetectors.The P-SnO photodetector also possesses the fastest decay time compared with typical n-type amorphous gallium oxide pho-todetectors.Introducing impurity energy levels through P doping is responsible for the increase in photogenerated electron-hole pairs and photocurrent and device performance enhancement.This work not only provides a simple method for preparing high-performance and low-cost p-type P-SnO films and photodetectors,but also offers a new approach for improving the performance of various p-type oxide semi-conductors and devices.

p-type SnOphosphorus dopingphotodetectors

徐力、覃粒、黄易、孟伊、徐建梅、赵凌、周炜、王庆、龚浩、孙剑

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Faculty of Materials Science and Chemistry,China University of Geosciences,Wuhan 430074,China

Zhengzhou Research Institute,Harbin Institute of Technology,Zhengzhou 450046,China

p-type SnO phosphorus doping photodetectors

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaGuangdong Basic and Applied Basic Research FoundationScientific Research Foundation for the Returned Overseas Chinese Scholars

61404116119752122023A1515010073KZ15Z20053

2024

10.1007/s40843-023-2730-5

中国科学:材料科学(英文)

中国科学:材料科学(英文)

CSTPCD
ISSN：
年,卷(期)：2024.67(2)
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