Ta2NiSe5/GaN范德华异质结用于具有超高响应性和耐恶劣环境的紫外光电探测器
Super-high responsivity and harsh environment-resistant ultraviolet photodetector enabled by Ta2NiSe5/GaN van der Waals heterojunction
雷剑鹏 1郑涛 2吴望龙 2郑照强 3郑筌升 4王小周 2肖文波 1李京波 5杨孟孟2
作者信息
- 1. Jiangxi Engineering Laboratory for Optoelectronics Testing Technology,Nanchang Hangkong University,Nanchang 330063,China
- 2. Guangdong Provincial Key Laboratory of Chip and Integration Technology,School of Semiconductor Science and Technology,South China Normal University,Foshan 528225,China
- 3. School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China
- 4. Department of Applied Physics,School of Physics and Electronics,Hunan University,Changsha 410082,China
- 5. College of Optical Science and Engineering,Zhejiang University,Hangzhou 310027,China
- 折叠
摘要
氮化镓由于其直接带隙、固有的紫外吸收和高击穿电压引起了人们对其在紫外光电探测领域的极大研究兴趣.在本工作中,我们成功地将新型三元硫族化合物Ta2NiSe5与非故意掺杂的GaN堆叠,形成了具有典型Ⅰ型能带排列的混合维度的Ta2NiSe5/GaN(2D/3D)范德瓦尔斯异质结构.该异质结构表现出优异的紫外探测性能(光开关比为107,响应度为1.22 × 104 A W-1).此外,在365 nm的光照和4 V的偏压下,探测度提高至1.3 × 1016 Jones,并表现出1.22/31.6 ms的快速响应速率.值得注意的是,该器件还具有优异的稳定性、可重复性和抗恶劣环境条件(包括高温和酸性条件)的耐受性.得益于光电探测器的高响应度、探测度和光开关比,我们成功地将该异质结构器件集成到紫外光通信中,证明了 Ta2NiSe5/GaN光电探测器在信息传输中有着优异的应用前景.
Abstract
Gallium nitride(GaN)has garnered significant research interest for ultraviolet(UV)photodetectors due to its direct bandgap,inherent UV absorption window,and high breakdown voltage.In this work,a new ternary chalcogenides Ta2NiSe5 with high mobility is successfully stacked with un-intentionally-doped GaN to creat an integrated mixed-di-mensional Ta2NiSe5/GaN(2D/3D)van der Waals heterojunction with a typical type-Ⅰ band alignment.The re-sulting Ta2NiSe5/GaN heterojunction exhibits excellent UV detection performance,with a pronounced light on/off ratio of 107 and a large responsivity of 1.22 × 104 A W-1.Moreover,it demonstrates an enhanced detectivity up to 1.3 × 1016 Jones under 365-nm light illumination at a bias of 4 V.The photo-detector also exhibits a fast response speed of 1.22/3.16 ms.Remarkably,the device showcases exceptional stability,re-peatability,and tolerance to harsh environmental conditions,including high temperature and acidic condition.Further-more,leveraging the high responsivity,detectivity,and light on/off ratio of the photodetector,we successfully integrate this heterojunction device into UV optical communication,high-lighting its potential in information transmission.
关键词
GaN/Ta2NiSe5/heterojunction/UV photodetector/super-high responsivity/harsh environment-resistantKey words
GaN/Ta2NiSe5/heterojunction/UV photodetector/super-high responsivity/harsh environment-resistant引用本文复制引用
基金项目
国家自然科学基金(62175040)
国家自然科学基金(61805044)
国家自然科学基金(12064027)
国家自然科学基金(62065014)
广州市科技计划(202201010242)
Guangdong Basic and Applied Basic Research Foundation(2022A1515110981)
2022 Jiangxi Province High-level and Highskilled Leading Talent Training Project Selected(63)
Jiangxi Provincial Department of Education Science and Technology Key Project(GJJ2204302)
Jiujiang Municipal Science and Technology Program(Natural Science Foundation,Innovative Talents)(2022-2023)()
出版年
2024
NETL
NSTL
万方数据